Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures

Y. Dong, P. M. Mooney, F. Cai, Dalaver H. Anjum, N. Ur-Rehman, Xixiang Zhang, G. (Maggie) Xia

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4 Scopus citations

Abstract

Si-Ge interdiffusion and strain relaxation were studied in a metastable SiGe epitaxial structure. With Ge concentration profiling and ex-situ strain analysis, it was shown that during thermal anneals, both Si-Ge interdiffusion and strain relaxation occurred. Furthermore, the time evolutions of both strain relaxation and interdiffusion were characterized. It showed that during the ramp-up stage of thermal anneals at higher temperatures (800°C and 840°C), the degree of relaxation, R, reached a “plateau”, while interdiffusion was negligible. With the approximation that the R value is constant after the ramp-up stage, a quantitative interdiffusivity model was built to account for both the effect of strain relaxation and the impact of the relaxation induced dislocations, which gave good agreement with the experiment data.
Original languageEnglish (US)
Pages (from-to)P302-P309
Number of pages1
JournalECS Journal of Solid State Science and Technology
Volume3
Issue number10
DOIs
StatePublished - Jul 26 2014

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