Experimental and theoretical study of the cracking behavior of sol-gel-derived SiO2 film on InP substrate

J. Liu*, Y. L. Lam, Y. C. Chan, Y. Zhou, Boon Ooi, Z. S. Yun

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

In this paper, we study and characterize the cracking behavior of a sol-gel-derived amorphous silica film on a InP substrate. The sol-gel silica films are deposited by spin-coating and rapid thermal processing (RTP). It is observed that the volatility of the III-V semiconductor results in the cracking of the films when the annealing temperature is higher than 450°C, and that the crack patterns are all parallel or perpendicular to 〈100〉. The experimental results on the crack patterns in the sol-gel silical films are then theoretically analyzed. In addition, the critical thicknesses of the sol-gel films on InP are compared with those deposited on Si.

Original languageEnglish (US)
Pages (from-to)341-343
Number of pages3
JournalApplied Physics A: Materials Science and Processing
Volume70
Issue number3
DOIs
StatePublished - Mar 1 2000

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

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