In this paper, we study and characterize the cracking behavior of a sol-gel-derived amorphous silica film on a InP substrate. The sol-gel silica films are deposited by spin-coating and rapid thermal processing (RTP). It is observed that the volatility of the III-V semiconductor results in the cracking of the films when the annealing temperature is higher than 450°C, and that the crack patterns are all parallel or perpendicular to 〈100〉. The experimental results on the crack patterns in the sol-gel silical films are then theoretically analyzed. In addition, the critical thicknesses of the sol-gel films on InP are compared with those deposited on Si.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics A: Materials Science and Processing|
|State||Published - Mar 1 2000|
ASJC Scopus subject areas
- Materials Science(all)