Experimental and theoretical investigation of the effect of SiO2 content in gate dielectrics on work function shift induced by nanoscale capping layers

Jesus Alfonso Caraveo-Frescas, H. Wang, Udo Schwingenschlögl, Husam N. Alshareef

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The impact of SiO2 content in ultrathin gate dielectrics on the magnitude of the effective work function (EWF) shift induced by nanoscale capping layers has been investigated experimentally and theoretically. The magnitude of the effective work function shift for four different capping layers (AlN, Al2O3, La2O3, and Gd2O3) is measured as a function of SiO2 content in the gate dielectric. A nearly linear increase of this shift with SiO2 content is observed for all capping layers. The origin of this dependence is explained using density functional theory simulations.
Original languageEnglish (US)
Pages (from-to)112902
JournalApplied Physics Letters
Volume101
Issue number11
DOIs
StatePublished - Sep 10 2012

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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