Experimental and Simulation Study of Resistive Switching Properties in Novel Cu/Poly-Si/TiN CBRAM Crossbar Device

Umesh Chand, Den Berco, Ren Li, Meshal Alawein, Hossein Fariborzi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work we demonstrate the uniform resistive switching (RS) behavior of Cu/Poly-Si/TiN CBRAM crossbar structure device. A significant improvement in endurance is demonstrated in Poly-Si CBRAM device compared to Silicon dioxide (SiO) based device. The Cu/Poly-Si/TiN CBRAM device exhibits excellent memory performance, such as high ON/OFF resistance ratio, high endurance and good retention time (10 s). In addition to the experimental study, this work presents a numerical model for the Cu/Poly-Si/TiN CBRAM device. The simulation results based on this model perfectly match the experimental measurements.
Original languageEnglish (US)
Title of host publication2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages217-219
Number of pages3
ISBN (Print)9781538637128
DOIs
StatePublished - Sep 7 2018

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