Exciton localisation in CdSe islands buried in a quantum well of Zn1-xCdxSe

F. Gindele*, C. Märkle, U. Woggon, W. Langbein, J. M. Hvam, K. Leonardi, Kazuhiro Ohkawa, D. Hommel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

The optical properties of CdSe/ZnSe quantum structures with nominal thickness of the CdSe layer between 1 and 4 monolayers (ML) have been studied. The transition from two- to zero-dimensional quantum confinement can be monitored by photoluminescence (PL), photoluminescence-excitation (PLE), and time-resolved PL experiments. The influence of different degrees of localisation on the relaxation process of excitons is investigated. Experimental results for the excitonic transition energies are in good agreement with theory when strain-, confinement- and alloy-fluctuation-effects are included. The observation of multiple phonon modes indicates the formation of a Zn1-xCdxSe alloy with varying composition as well as the accumulation of CdSe in small islands.

Original languageEnglish (US)
Pages (from-to)306-310
Number of pages5
JournalJournal of Crystal Growth
Volume184-185
StatePublished - Jan 1 1998

Keywords

  • Localisation
  • Photoluminescence-excitation
  • Self-assembled islands
  • ZnCdSe-phonon modes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this