Exchange bias in patterned FeMn/NiFe bilayers

Zaibing Guo, K. B. Li, G. C. Han, Z. Y. Liu, P. Luo, Y. H. Wu

    Research output: Contribution to journalArticlepeer-review

    17 Scopus citations

    Abstract

    Electron beam lithography and ion beam etching have been used to pattern a wire-like array in FeMn/NiFe bilayers. The variation of hysteresis loops with the etching depth in FeMn layer has been presented, and it has been found that with increasing etching depth the coercivity increases and M-H loops show an asymmetric kink. Detailed studies of the magnetic behaviors of the asymmetric kink in the patterned sample with 3.5nm thick FeMn layer have been performed, and a magnetization component perpendicular to the wire direction has been observed.

    Original languageEnglish (US)
    Pages (from-to)323-326
    Number of pages4
    JournalJournal of Magnetism and Magnetic Materials
    Volume251
    Issue number3
    DOIs
    StatePublished - Nov 1 2002

    Keywords

    • Exchange bias
    • Hysteresis loops
    • Lithography
    • Training effects
    • Wire-like array

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

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