Exchange bias and magnetotransport properties in IrMn/NiFe/FeMn structures

Zaibing Guo, Y. H. Wu, J. J. Qiu, B. Y. Zong, G. C. Han

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    9 Scopus citations

    Abstract

    For the double exchange-biased IrMn/NiFe/FeMn structures, the pinning directions at IrMn/NiFe and NiFe/FeMn interfaces were set either parallel or antiparallel to each other by field annealing. Exchange bias and magnetotransport properties in IrMn/NiFe/FeMn trilayers were studied and compared with those of IrMn/NiFe and NiFe/FeMn bilayers. The dependence of exchange bias on the thickness of NiFe layer was different for parallel and antiparallel pinnings. A remarkable increase in resistance was observed which should be attributed to domain-wall resistance induced by the twisted spin structure. The spin configuration of twisted spin structure was simulated by one-dimensional atomic model.

    Original languageEnglish (US)
    Article number184413
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume78
    Issue number18
    DOIs
    StatePublished - Nov 14 2008

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

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