For the double exchange-biased IrMn/NiFe/FeMn structures, the pinning directions at IrMn/NiFe and NiFe/FeMn interfaces were set either parallel or antiparallel to each other by field annealing. Exchange bias and magnetotransport properties in IrMn/NiFe/FeMn trilayers were studied and compared with those of IrMn/NiFe and NiFe/FeMn bilayers. The dependence of exchange bias on the thickness of NiFe layer was different for parallel and antiparallel pinnings. A remarkable increase in resistance was observed which should be attributed to domain-wall resistance induced by the twisted spin structure. The spin configuration of twisted spin structure was simulated by one-dimensional atomic model.
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Nov 14 2008|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics