Evolution of structural order in germanium ion-implanted amorphous silicon layers

S. L. Cheng*, H. H. Lin, J. H. He, T. F. Chiang, C. H. Yu, L. J. Chen, C. K. Yang, D. Y. Wu, S. C. Chien, W. C. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

High-resolution transmission electron microscopy in conjunction with autocorrelation function analysis have been applied to investigate the evolution of structural order in germanium ion-implanted amorphous silicon (a-Si) layers. A high density of Si nanocrystallites as small as 1 nm in size was detected in as-implanted a-Si layers. The density of embedded nanocrystalline Si was found to diminish in a-Si layers with annealing temperature first then increase. The results are discussed in the context of free energy change with annealing temperature.

Original languageEnglish (US)
Pages (from-to)910-913
Number of pages4
JournalJournal of Applied Physics
Volume92
Issue number2
DOIs
StatePublished - Jul 15 2002

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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