Evolution of InAs nanostructures grown by droplet epitaxy

Chao Zhao*, Y. H. Chen, B. Xu, P. Jin, Z. G. Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

The authors report the growth evolution of InAs dot and ring nanostructures with the indium deposition amount on GaAs (001) by droplet molecular beam epitaxy. There is a critical flux for the indium to form InAs dots even when there is no droplet. When the flux exceeds a critical value, In droplets form, which act as nucleation centers for the formation of InAs rings.

Original languageEnglish (US)
Article number033112
JournalApplied Physics Letters
Volume91
Issue number3
DOIs
StatePublished - Aug 1 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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