Evidence of cation vacancy induced room temperature ferromagnetism in Li-N codoped ZnO thin films

B. Y. Zhang*, B. Yao, Y. F. Li, A. M. Liu, Z. Z. Zhang, B. H. Li, G. Z. Xing, Tao Wu, X. B. Qin, D. X. Zhao, C. X. Shan, D. Z. Shen

*Corresponding author for this work

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49 Scopus citations

Abstract

Room temperature ferromagnetism (RTFM) was observed in Li-N codoped ZnO thin films [ZnO:(Li, N)] fabricated by plasma-assisted molecular beam epitaxy, and p-type ZnO:(Li, N) shows the strongest RTFM. Positron annihilation spectroscopy and low temperature photoluminescence measurements indicate that the RTFM in ZnO:(Li, N) is attributed to the defect complex related to V Zn, such as VZn and Lii-NO-V Zn complex, well supported by first-principles calculations. The incorporation of NO can stabilize and enhance the RTFM of ZnO:(Li, N) by combining with Lii to form Lii-NO complex, which restrains the compensation of Lii for VZn and makes the ZnO:(Li, N) conduct in p-type.

Original languageEnglish (US)
Article number182503
JournalApplied Physics Letters
Volume99
Issue number18
DOIs
StatePublished - Oct 31 2011

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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