Evidence of Carrier Localization in AlGaN/GaN based Ultraviolet Multiple Quantum Wells with Opposite Polarity Domains Provided by Nanoscale Imaging

Mei Cui, Wei Guo, Houqiang Xu, Jie'an Jiang, Li Chen, Somak Mitra, Iman S. Roqan, Haibo Jiang, Xiaohang Li, Jichun Ye

Research output: Contribution to journalArticlepeer-review

Abstract

AlGaN based multiple-quantum-wells (MQWs) incorporating opposite polarity domains was grown by MOCVD. A direct demonstration of carrier localization effect was provided by a combination analysis of space-resolved luminescence peak position and Ga/Al composition distribution. Furthermore, through Raman spectroscopy, it is found that compressive strain plays a key role in improving the optical properties of UV-MQWs despite of the inferior crystalline quality in the N-polar domains. This suggests that incorporating sub-micrometer scale polarity domains in the MQWs is a promising perspective for the development of efficient UV emitters.
Original languageEnglish (US)
Journalphysica status solidi (RRL) – Rapid Research Letters
DOIs
StatePublished - Feb 25 2021

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