The effect of deposition temperature and film thickness on the work function of TiSiN gate electrodes has been studied. It is shown that the work function of TiSiN can be tuned from 4.28- 4.74 eV on SiO2, 4.40- 4.79 eV on HfO2, and 4.44- 4.83 eV on HfSiOx. For high- k dielectrics, the work function can be tuned by 200 meV on each side of the band gap, making it a suitable electrode for fully depleted silicon-on-insulator devices. Furthermore, TiSiN deposition at high temperature increases the work function to 4.87 eV while Si implantation increases it to 4.93 eV, making TiSiN a good p -type metal candidate.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)