Evaluation of titanium silicon nitride as gate electrodes for complementary metal-oxide semiconductor

H. Luan*, Husam Niman Alshareef, H. R. Harris, H. C. Wen, K. Choi, Y. Senzaki, P. Majhi, B. H. Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

The effect of deposition temperature and film thickness on the work function of TiSiN gate electrodes has been studied. It is shown that the work function of TiSiN can be tuned from 4.28- 4.74 eV on SiO2, 4.40- 4.79 eV on HfO2, and 4.44- 4.83 eV on HfSiOx. For high- k dielectrics, the work function can be tuned by 200 meV on each side of the band gap, making it a suitable electrode for fully depleted silicon-on-insulator devices. Furthermore, TiSiN deposition at high temperature increases the work function to 4.87 eV while Si implantation increases it to 4.93 eV, making TiSiN a good p -type metal candidate.

Original languageEnglish (US)
Article number142113
JournalApplied Physics Letters
Volume88
Issue number14
DOIs
StatePublished - Apr 3 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Evaluation of titanium silicon nitride as gate electrodes for complementary metal-oxide semiconductor'. Together they form a unique fingerprint.

Cite this