Evaluation of the strain state in SiGe/Si heterostructures by high resolution X-ray diffraction and convergent beam electron diffraction

Suey Li Toh*, K. Li, C. H. Ang, R. Rao, E. Er, K. P. Loh, C. B. Boothroyd, L. Chan

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We have used both convergent beam electron diffraction (CBED) and high-resolution X-ray diffractometry (HRXRD) to investigate the influence of different graded layer thicknesses on the overall and interfacial strain phenomena in the SiGe/Si heterostructures. Broadening of the higher order Laue zone (HOLZ) reflections is often observed at the interface, and contains information relating to the lattice behaviour. These results, when considered and correlated with the plots from HRXRD, allow us to predict the optimized relaxation mechanisms taking place at the interfacial regions.

Original languageEnglish (US)
Title of host publicationProceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005
EditorsT. Chih-hang, L. Soon, C.J. Min, A. Trigg
Pages302-305
Number of pages4
StatePublished - 2005
Externally publishedYes
Event12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005 - Singapore, Singapore
Duration: Jun 27 2005Jul 1 2005

Other

Other12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005
CountrySingapore
CitySingapore
Period06/27/0507/1/05

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint

Dive into the research topics of 'Evaluation of the strain state in SiGe/Si heterostructures by high resolution X-ray diffraction and convergent beam electron diffraction'. Together they form a unique fingerprint.

Cite this