Evaluation of cyclic gallium amides as precursors for gallium nitride thin films

Jayaprakash Khanderi*, Manuela Winter, Harish Parala, Hans Werner Becker, Roland A. Fischer

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Cyclic gallium amides of the type 1-methyl-2,5-dialkyl-2,5-diaza-1- gallapentanes (MeGa[NR(CH2)2NR])2 R = Me [1] and Et [2], were used as single source precursors to deposit GaN thin films. 1 and 2 were synthesized in good yield by salt metathesis reaction using MeGaCl2 and dilithium amides such as LiNR(CH2) 2RNLi [where R = Me or Et] and characterized by routine analytical tools. Single crystal X-ray structures of 1 and 2 showed a association into dimers in the solid state with the formation of a Ga2N2 donor-acceptor bonded structural motif. 1 decomposed immediately after melting (m.p. 149°C), however 2 can be sublimed at 90°C (m.p. 100°C) without decomposition and hence was suitable for MOCVD studies. Compound 2 was tested for single source characteristics using N2 and H2 as carrier gas. 2 starts to decompose above 375°C to metallic gallium droplets as indicated by SEM. Polycrystalline GaN films were obtained only when using N2 and H2 as carrier gas and NH3 as additional reactive gas. GaN deposited using H2 as carrier gas showed improved quality than in case of N2 only.

Original languageEnglish (US)
Title of host publicationEUROCVD-15
Subtitle of host publicationFifteenth European Conference on Chemical Vapor Deposition
EditorsA. Devi, R. Fischer, H. Parala, M.D. Allendorf, M. Hitchman
Pages744-753
Number of pages10
VolumePV 2005-09
StatePublished - 2005
Externally publishedYes
Event15th European Conference on Chemical Vapor Deposition, EUROCVD-15 - Bochum, Germany
Duration: Sep 5 2005Sep 9 2005

Other

Other15th European Conference on Chemical Vapor Deposition, EUROCVD-15
CountryGermany
CityBochum
Period09/5/0509/9/05

ASJC Scopus subject areas

  • Engineering(all)

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