Evaluation and integration of metal gate electrodes for future generation dual metal CMOS

P. Majhi*, H. C. Wen, Husam Niman Alshareef, K. Choi, R. Harris, P. Lysaght, H. Luan, Y. Senzaki, S. C. Song, B. H. Lee, C. Ramiller

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

12 Scopus citations

Abstract

An overview of factors that contribute to the effective work function of metal gate electrodes are presented and reasons for disparity in reported values for effective work function of similar metals from different groups are discussed. Utilizing a standardized technique to accurately extract the effective work function of metal gates, the potential of amorphous metal gate materials and hafnium-based electrodes is presented. Also, the influence of metal gate materials and processing on the physical and electrical stability of the highk-metal gate stacks are discussed.

Original languageEnglish (US)
Title of host publication2005 International Conference on Integrated Circuit Design and Technology, ICICDT
Pages69-72
Number of pages4
StatePublished - Oct 10 2005
Event2005 International Conference on Integrated Circuit Design and Technology, ICICDT - Austin, TX, United States
Duration: May 9 2005May 11 2005

Publication series

Name2005 International Conference on Integrated Circuit Design and Technology, ICICDT

Other

Other2005 International Conference on Integrated Circuit Design and Technology, ICICDT
CountryUnited States
CityAustin, TX
Period05/9/0505/11/05

ASJC Scopus subject areas

  • Engineering(all)

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