Er-doped zno nanorod arrays with enhanced 1540 nm emission by employing ag island films and high-temperature annealing

Jian Wei Lo, Wei Cheng Lien, Chin An Lin, Jr-Hau He*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

34 Scopus citations

Abstract

Single-crystalline Er-doped ZnO nanorod arrays (NRAs) on Ag island films with appropriate annealing show a promising enhancement of 1540 nm emission for optical communication. The enhanced 1540 nm emission of Er-doped ZnO NRAs is attributed to the enhancement of the deep level emission of ZnO host. In an effort to enhance deep level emission to pump Er3+ emission at 1540 nm in the Er-doped ZnO NRAs, surface plasmon coupling and increase in deep level states were carried out via Ag island films and high-temperature annealing. This study points to the effective methods to enhance 1540 nm emission, demonstrating that ZnO NRAs with Ag islands have a promising potential for the application in optical communications.

Original languageEnglish (US)
Pages (from-to)1009-1014
Number of pages6
JournalACS Applied Materials and Interfaces
Volume3
Issue number4
DOIs
StatePublished - Apr 27 2011

Keywords

  • Er emission
  • ZnO
  • nanorod
  • nanowire

ASJC Scopus subject areas

  • Materials Science(all)

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