Equivalent circuit model for the electron transport in 2D resistive switching material systems

E. Miranda, J. Sune, C. Pan, M. Villena, N. Xiao, M. Lanza

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

A compact model for the low and high resistance state conduction characteristics of electroformed capacitors with hexagonal boron nitride (A-BN) as insulator material and with multi-layer graphene and metal electrodes is presented. The model arises from an approximation of the expression for multi-filamentary electron transport with parabolic shaped constrictions. The model takes into account the parallel contribution of partially and fully formed localized current pathways spanning the two-dimensional (2D) film characterized by transmission coefficients T
Original languageEnglish (US)
Title of host publicationEuropean Solid-State Device Research Conference
PublisherEditions Frontiereshelp@computer.org
Pages86-89
Number of pages4
ISBN (Print)9781509059782
DOIs
StatePublished - Oct 12 2017
Externally publishedYes

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