Epitaxial growth of high quality inas/ingaalas quantum dash-in-well structure on INP

Y. Wang, H. S. Djie, V. Hongpinyo, C. L. Tan, Boon Ooi, J. C.M. Hwang, x. M. Fang, Ying Wu, J. M. Fastenau, W. K. Liu, G. T. Dang, W. H. Chang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report on the growth of InAs quantum-dash in InGaAlAs quantum-well structure on InP substrate using molecular beam epitaxy. The influence of different growth parameters such as InAs layer thickness, quantum barrier growth temperature, and number of stacking layers on the morphology and optical properties of dash structures were studied. The results serve as useful references for improved epitaxial growth control of InAs/InGaAlAs/InP system for optical device applications.

Original languageEnglish (US)
Title of host publication2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
DOIs
StatePublished - Dec 1 2008
Event2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008 - Versailles, France
Duration: May 25 2008May 29 2008

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Other

Other2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
CountryFrance
CityVersailles
Period05/25/0805/29/08

Keywords

  • Dash-in-well
  • Epitaxial growth
  • InP
  • Quantum dash

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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