Epitaxial growth of ferromagnetic Co: TiO2 thin films by co-sputtering

G. C. Han*, Y. H. Wu, M. Tay, K. B. Li, Z. B. Guo, T. C. Chong

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

Epitaxial anatase Co:TiO2 thin films were grown on LaAlO 3 (0 0 1) substrates by co-sputtering method. Structural and compositional properties were measured as a function of deposition parameters to explore the growth mechanism of the anatase films. Epitaxial anatase structure can be obtained at deposition temperatures ranged from 500 °C to 750 °C. magnetization measurements show that the saturation magnetization (Ms) increases as deposition temperature increases. At 750 °C, Ms is about 1.13 μB/Co. X-ray diffraction results show that the sample has a superior anatase crystallinity with the full-width at half-maximum of 0.13 °. It was found that Ms is directly related with the crystallinity, i.e., Ms increases as the crystallinity of samples improves.

Original languageEnglish (US)
Pages (from-to)159-164
Number of pages6
JournalJournal of Magnetism and Magnetic Materials
Volume268
Issue number1-2
DOIs
StatePublished - Jan 2004
Externally publishedYes

Keywords

  • Epitaxial growth
  • Magnetism
  • Semiconductors
  • Sputtering
  • Titanium oxide

ASJC Scopus subject areas

  • Condensed Matter Physics

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