Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface

Ming-yang Li, Yumeng Shi, Chia Chin Cheng, Li Syuan Lu, Yung Chang Lin, Hao-Ling Tang, Meng-Lin Tsai, Chih Wei Chu, Kung Hwa Wei, Jr-Hau He, Wen-Hao Chang, Kazu Suenaga, Lain-Jong Li

Research output: Contribution to journalArticlepeer-review

679 Scopus citations

Abstract

Two-dimensional transition metal dichalcogenides (TMDCs) such as molybdenum sulfide MoS2 and tungsten sulfide WSe2 have potential applications in electronics because they exhibit high on-off current ratios and distinctive electro-optical properties. Spatially connected TMDC lateral heterojunctions are key components for constructing monolayer p-n rectifying diodes, light-emitting diodes, photovoltaic devices, and bipolar junction transistors. However, such structures are not readily prepared via the layer-stacking techniques, and direct growth favors the thermodynamically preferred TMDC alloys. We report the two-step epitaxial growth of lateral WSe2-MoS2 heterojunction, where the edge of WSe2 induces the epitaxial MoS2 growth despite a large lattice mismatch. The epitaxial growth process offers a controllable method to obtain lateral heterojunction with an atomically sharp interface.
Original languageEnglish (US)
Pages (from-to)524-528
Number of pages5
JournalScience
Volume349
Issue number6247
DOIs
StatePublished - Jul 30 2015

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