Epitaxial growth of β-Ga2O3/ϵ-Ga2O3 polymorphic heterostructures on c-plane sapphire for deep-ultraviolet optoelectronics

Nasir Alfaraj, Kuang Hui Li, Chun Hong Kang, Laurentiu Braic, Tien Khee Ng, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Thin polymorphic gallium oxide films were grown on c-plane sapphire using pulsed laser deposition. The stacked thin films (ϵ-Ga2O3 and β-Ga2O3) were sequentially grown under the same conditions but in a different ambience. Our X-ray diffraction measurements and transmission electron microscopy images confirmed a β-Ga2O3/ϵ-Ga2O3 polymorphic heterostructure with rocking-curve widths of 1.4° (β-Ga2O3 (603)) and 0.6° (ϵ-Ga2O3 (006)). The crystallographic orientation relationships between c-plane sapphire and the heterogeneously nucleated ϵ-Ga2O3 buffer layer, as well as between the ϵ-Ga2O3 and β-Ga2O3 heterogeneous layers, were determined. Our study will aid in developing novel deep-ultraviolet optoelectronic devices, such as solar-blind and metal-insulator-semiconductor deep-ultraviolet photodiodes.
Original languageEnglish (US)
Title of host publicationOxide-based Materials and Devices XI
PublisherSPIE
ISBN (Print)9781510633254
DOIs
StatePublished - Mar 6 2020

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