Enhancing GaInNAs/GaAs single quantum well emission wavelength by utilizing GaNAs step graded layer

Sufian M. Mitani*, Mohd S. Alias, Azlian A. Manaf, Farha M. Exhan

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The effects of ultra-thin GaNAs step graded layer sandwiched between GaInNAs well layer and GaAs barrier layer were fully investigated. Significant improvements were observed in the optical performance of the 1.3 m range with the proposed GaNAs step graded layer structure. It was noticed that introducing GaNAs step graded layer extends efficiently the operational wavelength without changing the percentage of nitrogen composition in the GaInNAs quantum well while maintaining the same photoluminescence characteristics. Furthermore, the elongation of the lasing wavelength of the proposed device without a threshold penaltywas also demonstrated by utilizing the GaNAs step graded layer.

Original languageEnglish (US)
Title of host publication2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts
Pages396-399
Number of pages4
DOIs
StatePublished - 2011
Externally publishedYes
Event2011 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2011 - Kota Kinabalu, Sabah, Malaysia
Duration: Sep 28 2011Sep 30 2011

Other

Other2011 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2011
CountryMalaysia
CityKota Kinabalu, Sabah
Period09/28/1109/30/11

Keywords

  • Dilute nitrides
  • GaNAs
  • quantum wells
  • Semiconducting III-V materials
  • Semiconductor laser

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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