The pattern of dots with height about 1.2nm is formed on Si substrates by ion sputtering. Top, bottom spin valves, and bottom spin valves with a nano-oxide layer are fabricated on both non-ion sputtered and ion sputtered Si substrates. Magnetoresistance ratio increase around 10% has been achieved in the spin valves on the ion sputtered substrates.
- Giant magnetoresistance
- Hysteresis loops
- Magnetic properties of interfaces
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics