Enhanced thermal and morphological stability of Ni(Si1-xGe x) growth on BF2+-preamorphized Si 0.8Ge0.2 substrate

Jr-Hau He*, W. W. Wu, L. J. Chen

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

7 Scopus citations

Abstract

The stability of nickel germanosilicide formed on Ni thin films on Si 0.8Ge0.2 was found to be enhanced by the BF2+-preamorphization of the epitaxial Si-Ge layer. Agglomeration of polycrystalline Ni(Si1-xGex) is retarded by 100 °C in the BF2+-implanted samples. The growth of laterally uniform Ni(Si 1-xGex) and resistance to agglomeration at high temperature in the BF2+-implanted samples are attributed to the retardation of the growth of Ni(Si1-xGex) grains by the presence of fluorine bubbles. Sheet resistance measurement was found to correlate well with the transmission electron microscope observation.

Keywords

  • Germanosilicide
  • Implantation
  • Ni silicide
  • Preamorphization
  • SiGe

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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