We report here, for the first time, on enhanced nonresonant detection of terahertz radiation using multiple InGaAs/GaAs high-electron-mobility transistors (HEMTs) connected in series and biased by a direct drain current. A 1.63 THz (184 mum) response is proportional to the number of detecting transistors operating in saturation region at the same gate-source bias voltage. The experimental data are in agreement with the detection mechanism based on the rectification of overdamped plasma waves excited by radiation in channels of devices.
|Original language||English (US)|
|Title of host publication||2009 IEEE MTT-S International Microwave Symposium Digest|
|Publisher||Institute of Electrical and Electronics Engineers (IEEE)|
|Number of pages||4|
|State||Published - Jul 22 2009|