Enhanced terahertz detection using multiple GaAs HEMTs connected in series

Tamer A. Elkhatib, Dmitry B. Veksler, Khaled N. Salama, Xi-C. Zhang, Michael S. Shur

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We report here, for the first time, on enhanced nonresonant detection of terahertz radiation using multiple InGaAs/GaAs high-electron-mobility transistors (HEMTs) connected in series and biased by a direct drain current. A 1.63 THz (184 mum) response is proportional to the number of detecting transistors operating in saturation region at the same gate-source bias voltage. The experimental data are in agreement with the detection mechanism based on the rectification of overdamped plasma waves excited by radiation in channels of devices.
Original languageEnglish (US)
Title of host publication2009 IEEE MTT-S International Microwave Symposium Digest
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages937-940
Number of pages4
ISBN (Print)9781424428038
DOIs
StatePublished - Jul 22 2009

Fingerprint Dive into the research topics of 'Enhanced terahertz detection using multiple GaAs HEMTs connected in series'. Together they form a unique fingerprint.

Cite this