Enhanced plasma wave detection of terahertz radiation using multiple high electron-mobility transistors connected in series

Tamer A. Elkhatib, Valentin Yu Kachorovskiǐ, William J. Stillman, Dmitry B. Veksler, Khaled N. Salama, Xicheng Zhang, Michael S. Shur

Research output: Contribution to journalArticlepeer-review

46 Scopus citations

Abstract

We report on enhanced room-temperature detection of terahertz radiation by several connected field-effect transistors. For this enhanced nonresonant detection, we have designed, fabricated, and tested plasmonic structures consisting of multiple InGaAs/GaAs pseudomorphic high electron-mobility transistors connected in series. Results show a 1.63-THz response that is directly proportional to the number of detecting transistors biased by a direct drain current at the same gate-to-source bias voltages. The responsivity in the saturation regime was found to be 170 V/W with the noise equivalent power in the range of 10-7 W/Hz0.5. The experimental data are in agreement with the detection mechanism based on the rectification of overdamped plasma waves excited by terahertz radiation in the transistor channel. © 2010 IEEE.
Original languageEnglish (US)
Pages (from-to)331-339
Number of pages9
JournalIEEE Transactions on Microwave Theory and Techniques
Volume58
Issue number2
DOIs
StatePublished - Feb 2010

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Radiation

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