Enhanced light output power of InGaN-based amber LEDs by strain-compensating AlN/AlGaN barriers

Daisuke Iida*, Shen Lu, Sota Hirahara, Kazumasa Niwa, Satoshi Kamiyama, Kazuhiro Ohkawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

We investigated the effect of a combined AlN/Al0.03Ga0.97N barrier on InGaN-based amber light-emitting diodes (LEDs) grown by metalorganic vapor-phase epitaxy. InGaN-based multiple quantum wells with a combined AlN/Al0.03Ga0.97N barrier showed intense photoluminescence with a narrow full-width at half-maximum. The amber LEDs with a combined AlN/Al0.03Ga0.97N barrier achieved a light output power enhanced approximately 2.5-fold at 20 mA compared to that of the LED with a combined AlN/GaN barrier, owing to the reduction of defects in InGaN active layers. Thus, the efficiency of high-In-content InGaN-based LEDs can be improved in the spectrum range of amber.

Original languageEnglish (US)
Pages (from-to)105-108
Number of pages4
JournalJournal of Crystal Growth
Volume448
DOIs
StatePublished - Aug 15 2016
Externally publishedYes

Keywords

  • A2. Quantum wells
  • A3. Metalorganic vapor phase epitaxy
  • B1. Nitrides
  • B3. Light emitting diodes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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