Enhanced hot-hole induced degradation of strained p-channel metal oxide semiconductor transistors in complementary metal oxide semiconductor technology with 2.0 nm gate oxide

Kwang Seng See*, Wai Shing Lau, Jae Gon Lee, Suey Li Toh, Hong Liao, Kun Li, Elgin Kiok Boone Quek, Lap Hung Chan

*Corresponding author for this work

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