Enhanced carrier density in Nb-doped SrTiO3 thermoelectrics

K. Ozdogan, M. Upadhyay Kahaly, S. R. Sarath Kumar, Husam N. Alshareef, Udo Schwingenschlögl

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

We study epitaxial SrTiO3 interfaced with Nb-doped SrTi1-x Nb x O3 (x = 0, 0.125, 0.25, 0.375, and 0.5) by full-potential density functional theory. From the electronic band structures obtained by our ab-initio calculations we determine the dependence of the induced metallicity on the Nb concentration. We obtain a monotonous increase of the carrier density with the Nb concentration. The results are confirmed by experiments for SrTi0.88Nb0.12O3 and SrTi0.8Nb0.2O3, demonstrating the predictive power and limitations of our theoretical approach. We also show that the Seebeck coefficient decreases monotonously with increasing temperature.
Original languageEnglish (US)
Pages (from-to)054313
JournalJournal of Applied Physics
Volume111
Issue number5
DOIs
StatePublished - Mar 9 2012

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Enhanced carrier density in Nb-doped SrTiO3 thermoelectrics'. Together they form a unique fingerprint.

Cite this