Engineering the interaction forces to optimize CMP performance

G. B. Basim*, I. Vakarelski, P. Singh, B. M. Moudgil

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The main objective of Chemical Mechanical Polishing (CMP) process is to planarize the metal or dielectric layers deposited on the wafer surfaces in microelectronics device manufacturing. In CMP, slurries containing submicrometer size particles and chemicals are used to achieve planarization. An effective polishing requires an optimal material removal rate with minimal surface deformation. Therefore, it is important to control the particle-substrate interactions that are responsible for the material removal and the particle-particle interactions, which control the slurry stability and consequently the defect density. This paper discusses the impact of interaction forces on polishing, and underlines the scientific guidelines to formulate consistently high performing CMP slurries.

Original languageEnglish (US)
Title of host publicationChemical-Mechanical Planarization
PublisherMaterials Research Society
Pages73-77
Number of pages5
ISBN (Print)1558996680, 9781558996687
DOIs
StatePublished - Jan 1 2002
Event2002 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 1 2002Apr 5 2002

Publication series

NameMaterials Research Society Symposium Proceedings
Volume732
ISSN (Print)0272-9172

Other

Other2002 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period04/1/0204/5/02

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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