Energy loss rates of hot Dirac fermions in epitaxial, exfoliated, and CVD graphene

A. M.R. Baker*, J. A. Alexander-Webber, T. Altebaeumer, S. D. McMullan, T. J.B.M. Janssen, A. Tzalenchuk, S. Lara-Avila, S. Kubatkin, R. Yakimova, C. T. Lin, Lain-Jong Li, R. J. Nicholas

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

41 Scopus citations

Abstract

Energy loss rates for hot carriers in graphene have been measured using graphene produced by epitaxial growth on SiC, exfoliation, and chemical vapor deposition (CVD). It is shown that the temperature dependence of the energy loss rates measured with high-field damped Shubnikov-de Haas oscillations and the temperature dependence of the weak localization peak close to zero field correlate well, with the high-field measurements understating the energy loss rates by ∼40% compared to the low-field results. The energy loss rates for all graphene samples follow a universal scaling of Te4 at low temperatures and depend weakly on carrier density â̂n-12, evidence for enhancement of the energy loss rate due to disorder in CVD samples.

Original languageEnglish (US)
Article number045414
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume87
Issue number4
DOIs
StatePublished - Jan 11 2013

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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