Enabling area-selective potential-energy engineering in InGaN/GaN quantum wells by post-growth intermixing

Chao Shen, Tien Khee Ng, Boon S. Ooi

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

We report on a unique area-selective, post-growth approach in engineering the quantum-confined potential-energy profile of InGaN/GaN quantum wells (QWs) utilizing metal/dielectric-coating induced intermixing process. This led to simultaneous realization of adjacent regions with peak emission of 2.74 eV and 2.82 eV with a high spatial resolution (~1 μm) at the coating boundary. The potential profile softening in the intermixed QW light-emitting diode (LED) was experimentally and numerically correlated, shedding light on the origin of alleviated efficiency droop from 30.5% to 16.6% (at 150 A/cm2). The technique is advantageous for fabricating high efficiency light-emitters, and is amenable to monolithic integration of nitride-based photonic devices.
Original languageEnglish (US)
Pages (from-to)7991
JournalOptics Express
Volume23
Issue number6
DOIs
StatePublished - Mar 19 2015

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