Elucidating the origin of resistive switching in ultrathin hafnium oxides through high spatial resolution tools

Y. Shi, Y. Ji, F. Hui, V. Iglesias, M. Porti, M. Nafria, E. Miranda, G. Bersuker, M. Lanza

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Scopus citations

Abstract

A new generation of non-volatile memories that store information in a metal/insulator/metal cell with switchable electrical resistance is gaining attention due to its simple structure and high yield. Despite extensive device level measurements have been performed, the origin of the resistive switching remains unclear. In this work, we use a disruptive approach to characterize cyclic resistivity changes at the nanoscale, combining a standard conductive atomic force microscope and a semiconductor parameter analyzer. Using this setup, we are able to assess the origin of resistive switching in Hafnium-based oxides, which takes place at the grain boundaries of polycrystalline stacks, and further calculations corroborate the local nature of this phenomenon.
Original languageEnglish (US)
Title of host publicationECS Transactions
PublisherElectrochemical Society Inc.ecs@electrochem.org
Pages19-28
Number of pages10
DOIs
StatePublished - Jan 1 2014
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

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