Electronic properties of ZnO field-effect transistors fabricated by spray pyrolysis in ambient air

George Adamopoulos, Aneeqa Bashir, Paul H. Wöbkenberg, Donal D.C. Bradley, Thomas D. Anthopoulos

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Abstract

We report the application of spray pyrolysis (SP) for the deposition of high quality zinc oxide (ZnO) films and the fabrication of thin-film transistors. The chemical, structural, optical, and electronic properties of as-deposited ZnO films are studied using infrared spectroscopy, atomic force microscopy, UV-visible spectroscopic ellipsometry, and field-effect measurements. SP ZnO films are found to be uniform and polycrystalline with a band gap of 3.32 eV. ZnO transistors exhibit n -channel characteristics with electron mobility in the range 10-22 cm2/Vs. Device performance is found to depend on the work function of source/drain metal electrodes and on the device architecture employed.

Original languageEnglish (US)
Article number133507
JournalApplied Physics Letters
Volume95
Issue number13
DOIs
StatePublished - Oct 12 2009
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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