Electronic properties of polar and nonpolar InN surfaces: A quasiparticle picture

Abderrezak Belabbes*, J. Furthmüller, F. Bechstedt

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

33 Scopus citations

Abstract

Using density-functional-based total-energy calculations and the LDA-1/2 method to compute approximately quasiparticle band structures, we have studied clean relaxed InN surfaces with varying polarity. More in detail, the c-plane, a-plane, and m-plane surfaces have been investigated. In contrast to the polar faces, which allow Fermi level pinning, the projected fundamental bulk gap of about 0.71 eV is free of surface states in the nonpolar cases. Consequently, freshly cleaved InN surfaces cannot lead to a surface accumulation layer. The different electronic structures modify the surface dipole and hence the ionization energy and electron affinity significantly when varying the surface normal from [0001] via [11̄00] or [112̄0] to [0001̄].

Original languageEnglish (US)
Article number205304
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume84
Issue number20
DOIs
StatePublished - Nov 10 2011

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Electronic properties of polar and nonpolar InN surfaces: A quasiparticle picture'. Together they form a unique fingerprint.

Cite this