Electronic properties of Mn-decorated silicene on hexagonal boron nitride

Thaneshwor P. Kaloni, S. Gangopadhyay, Burton Jones, Udo Schwingenschlögl, Nirpendra Singh

Research output: Contribution to journalArticlepeer-review

61 Scopus citations

Abstract

We study silicene on hexagonal boron nitride, using first-principles calculations. Since hexagonal boron nitride is semiconducting, the interaction with silicene is weaker than for metallic substrates. It therefore is possible to open a 50 meV band gap in the silicene. We further address the effect of Mn decoration by determining the onsite Hubbard interaction parameter, which turns out to differ significantly for decoration at the top and hollow sites. The induced magnetism in the system is analyzed in detail.
Original languageEnglish (US)
JournalPhysical Review B
Volume88
Issue number23
DOIs
StatePublished - Dec 17 2013

Fingerprint

Dive into the research topics of 'Electronic properties of Mn-decorated silicene on hexagonal boron nitride'. Together they form a unique fingerprint.

Cite this