Electronic mobility in the high-carrier-density limit of ion gel gated IDTBT thin film transistors

Bei Bao, Xian Yi Shao, Lu Tan, Wen He Wang, Yue Shen Wu, Li Bin Wen, Jia Qing Zhao, Wei Tang, Weimin Zhang, Xiao Jun Guo*, Shun Wang, Ying Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Indacenodithiophene-co-benzothiadiazole (IDTBT) has emerged as one of the most exciting semiconducting polymers in recent years because of its high electronic mobility and charge transport along the polymer backbone. By using the recently developed ion gel gating technique we studied the charge transport of IDTBT at carrier densities up to 1021 cm-3. While the conductivity in IDTBT was found to be enhanced by nearly six orders of magnitude by ionic gating, the charge transport in IDTBT was found to remain 3D Mott variable range hopping even down to the lowest temperature of our measurements, 12 K. The maximum mobility was found to be around 0.2 cm2•V-1•s-1, lower than that of Cytop gated field effect transistors reported previously. We attribute the lower mobility to the additional disorder induced by the ionic gating.

Original languageEnglish (US)
Article number098103
JournalChinese Physics B
Volume24
Issue number9
DOIs
StatePublished - Sep 1 2015

Keywords

  • ion gel gating charge transport
  • semiconducting polymer
  • variable range hopping

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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