Electronegativity and doping in semiconductors

Udo Schwingenschlögl, Alexander Chroneos, R. W. Grimes, Cosima Schuster

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Charge transfer predicted by standard models is at odds with Pauling’s electronegativities but can be reconciled by the introduction of a cluster formation model [Schwingenschlögl et al., Appl. Phys. Lett. 96, 242107 (2010)]. Using electronic structure calculations, we investigate p- and n-type doping in silicon and diamond in order to facilitate comparison as C has a higher electronegativity compared to Si. All doping conditions considered can be explained in the framework of the cluster formation model. The implications for codoping strategies and dopant-defect interactions are discussed.
Original languageEnglish (US)
Pages (from-to)046101
JournalJournal of Applied Physics
Volume112
Issue number4
DOIs
StatePublished - Aug 23 2012

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Electronegativity and doping in semiconductors'. Together they form a unique fingerprint.

Cite this