Electron-photon and electron-LO phonon intersubband scattering rates in GaN/AlN quantum wells

Guangyu Liu*, Hongping Zhao, Nelson Tansu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, we analyze and optimize the GaN / AlN coupled quantum well design with and without polarization for achieving intersubband transition wavelength at 1.55 μm to serve as quantum cascade lasers (QCL) active region. The computations of the electron-LO phonon and electron-photon scattering rates were carried out to optimize the gain media design for intersubband quantum well (QW) lasers. The AlN / GaN coupled QW structure leads to improved design in optimizing the intersubband transition, in comparison to that of single stage GaN / AlN QW structure. The comparison between polar and non-polar coupled QW results in different characteristics in various scattering rates, which in turn leads to different intersubband gain.

Original languageEnglish (US)
Title of host publicationPhysics and Simulation of Optoelectronic Devices XVIII
Volume7597
DOIs
StatePublished - 2010
Externally publishedYes
EventPhysics and Simulation of Optoelectronic Devices XVIII - San Francisco, CA, United States
Duration: Jan 25 2010Jan 28 2010

Other

OtherPhysics and Simulation of Optoelectronic Devices XVIII
CountryUnited States
CitySan Francisco, CA
Period01/25/1001/28/10

Keywords

  • Coupled QWs
  • GaN/AlN QWs
  • Intersubband quantum well
  • Polarization
  • Quantum cascade lasers

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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