Electron-photon and electron-LO phonon intersubband scattering rates in GaN/AlN quantum wells

Guangyu Liu; Hongping Zhao; Nelson Tansu

doi:10.1117/12.843054

Electron-photon and electron-LO phonon intersubband scattering rates in GaN/AlN quantum wells

Guangyu Liu^*, Hongping Zhao, Nelson Tansu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, we analyze and optimize the GaN / AlN coupled quantum well design with and without polarization for achieving intersubband transition wavelength at 1.55 μm to serve as quantum cascade lasers (QCL) active region. The computations of the electron-LO phonon and electron-photon scattering rates were carried out to optimize the gain media design for intersubband quantum well (QW) lasers. The AlN / GaN coupled QW structure leads to improved design in optimizing the intersubband transition, in comparison to that of single stage GaN / AlN QW structure. The comparison between polar and non-polar coupled QW results in different characteristics in various scattering rates, which in turn leads to different intersubband gain.

Original language	English (US)
Title of host publication	Physics and Simulation of Optoelectronic Devices XVIII
Volume	7597
DOIs	https://doi.org/10.1117/12.843054
State	Published - 2010
Externally published	Yes
Event	Physics and Simulation of Optoelectronic Devices XVIII - San Francisco, CA, United States Duration: Jan 25 2010 → Jan 28 2010

Other

Other	Physics and Simulation of Optoelectronic Devices XVIII
Country	United States
City	San Francisco, CA
Period	01/25/10 → 01/28/10

Keywords

Coupled QWs
GaN/AlN QWs
Intersubband quantum well
Polarization
Quantum cascade lasers

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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title = "Electron-photon and electron-LO phonon intersubband scattering rates in GaN/AlN quantum wells",

abstract = "In this work, we analyze and optimize the GaN / AlN coupled quantum well design with and without polarization for achieving intersubband transition wavelength at 1.55 μm to serve as quantum cascade lasers (QCL) active region. The computations of the electron-LO phonon and electron-photon scattering rates were carried out to optimize the gain media design for intersubband quantum well (QW) lasers. The AlN / GaN coupled QW structure leads to improved design in optimizing the intersubband transition, in comparison to that of single stage GaN / AlN QW structure. The comparison between polar and non-polar coupled QW results in different characteristics in various scattering rates, which in turn leads to different intersubband gain.",

keywords = "Coupled QWs, GaN/AlN QWs, Intersubband quantum well, Polarization, Quantum cascade lasers",

author = "Guangyu Liu and Hongping Zhao and Nelson Tansu",

year = "2010",

doi = "10.1117/12.843054",

language = "English (US)",

isbn = "9780819479938",

volume = "7597",

booktitle = "Physics and Simulation of Optoelectronic Devices XVIII",

note = "Physics and Simulation of Optoelectronic Devices XVIII ; Conference date: 25-01-2010 Through 28-01-2010",

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TY - GEN

T1 - Electron-photon and electron-LO phonon intersubband scattering rates in GaN/AlN quantum wells

AU - Liu, Guangyu

AU - Zhao, Hongping

AU - Tansu, Nelson

PY - 2010

Y1 - 2010

N2 - In this work, we analyze and optimize the GaN / AlN coupled quantum well design with and without polarization for achieving intersubband transition wavelength at 1.55 μm to serve as quantum cascade lasers (QCL) active region. The computations of the electron-LO phonon and electron-photon scattering rates were carried out to optimize the gain media design for intersubband quantum well (QW) lasers. The AlN / GaN coupled QW structure leads to improved design in optimizing the intersubband transition, in comparison to that of single stage GaN / AlN QW structure. The comparison between polar and non-polar coupled QW results in different characteristics in various scattering rates, which in turn leads to different intersubband gain.

AB - In this work, we analyze and optimize the GaN / AlN coupled quantum well design with and without polarization for achieving intersubband transition wavelength at 1.55 μm to serve as quantum cascade lasers (QCL) active region. The computations of the electron-LO phonon and electron-photon scattering rates were carried out to optimize the gain media design for intersubband quantum well (QW) lasers. The AlN / GaN coupled QW structure leads to improved design in optimizing the intersubband transition, in comparison to that of single stage GaN / AlN QW structure. The comparison between polar and non-polar coupled QW results in different characteristics in various scattering rates, which in turn leads to different intersubband gain.

KW - Coupled QWs

KW - GaN/AlN QWs

KW - Intersubband quantum well

KW - Polarization

KW - Quantum cascade lasers

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U2 - 10.1117/12.843054

DO - 10.1117/12.843054

M3 - Conference contribution

AN - SCOPUS:77953302336

SN - 9780819479938

VL - 7597

BT - Physics and Simulation of Optoelectronic Devices XVIII

T2 - Physics and Simulation of Optoelectronic Devices XVIII

Y2 - 25 January 2010 through 28 January 2010

ER -

Electron-photon and electron-LO phonon intersubband scattering rates in GaN/AlN quantum wells

Abstract

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Keywords

ASJC Scopus subject areas

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