Electron mobility in MOSFETs with ultrathin RTCVD silicon nitride/oxynitride stacked gate dielectrics

K. J. Yang*, T. J. King, C. Hu, S. Levy, Husam Niman Alshareef

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Fingerprint

Dive into the research topics of 'Electron mobility in MOSFETs with ultrathin RTCVD silicon nitride/oxynitride stacked gate dielectrics'. Together they form a unique fingerprint.