Electron irradiation induced reduction of the permittivity in chalcogenide glass (As2S3) thin film

Damian San Roman Alerigi, Dalaver H. Anjum, Yaping Zhang, Xiaoming Yang, Ahmed Ben Slimane, Tien Khee Ng, Mohamed N. Hedhili, Mohammad Alsunaidi, Boon S. Ooi

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

In this paper, we investigate the effect of electron beam irradiation on the dielectric properties of As 2 S 3 chalcogenide glass. By means of low-loss electron energy loss spectroscopy, we derive the permittivity function, its dispersive relation, and calculate the refractive index and absorption coefficients under the constant permeability approximation. The measured and calculated results show a heretofore unseen phenomenon: a reduction in the permittivity of ? 40 %. Consequently a reduction of the refractive index of 20%, hence, suggests a conspicuous change in the optical properties of the material under irradiation with a 300 keV electron beam. The plausible physical phenomena leading to these observations are discussed in terms of the homopolar and heteropolar bond dynamics under high energy absorption. The reported phenomena, exhibited by As 2 S 3-thin film, can be crucial for the development of photonics integrated circuits using electron beam irradiation method. © 2013 American Institute of Physics.
Original languageEnglish (US)
Pages (from-to)044116
JournalJournal of Applied Physics
Volume113
Issue number4
DOIs
StatePublished - Jan 30 2013

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint

Dive into the research topics of 'Electron irradiation induced reduction of the permittivity in chalcogenide glass (As2S3) thin film'. Together they form a unique fingerprint.

Cite this