Electron field emission enhancement effects of nano-diamond films

S. G. Wang*, Qing Zhang, S. F. Yoon, J. Ahn, Q. Zhou, Q. Wang, D. J. Yang, Jingqi Li, Sam Zhang Shanyong

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    61 Scopus citations

    Abstract

    In this paper, electron field emission properties of nano-diamond films, which were prepared using either CH4/H2/ N2 or CH4 /Ar microwave plasma enhanced chemical vapor deposition, were studied. X-ray photoelectron spectroscopy detection indicates that nitrogen was incorporated into the nano-diamond film grown in CH4/H2/N2 mixture. This nano-diamond film shows a very low threshold electric field of 2.2 V/μm and a high emission current density of 720 μA/cm2 at applied field of 6.4 V/μm. Nitrogen incorporation, high grain boundary density and sp2-bonded non-diamond components in the films are believed to be responsible for the electron emission enhancement.

    Original languageEnglish (US)
    Pages (from-to)143-147
    Number of pages5
    JournalSurface and Coatings Technology
    Volume167
    Issue number2-3
    DOIs
    StatePublished - Apr 22 2003

    Keywords

    • Electron emitter
    • Electron field emission
    • MPECVD
    • Nano-diamond film

    ASJC Scopus subject areas

    • Chemistry(all)
    • Condensed Matter Physics
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Materials Chemistry

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