Electron cyclotron resonance plasma etching of InP through-wafer connections at >4 μm/min using Cl2/Ar

Y. W. Chen*, Boon Ooi, G. I. Ng, C. L. Tan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

We report the development of very high etch rates (>4 μm/min), for InP via hole processes. These processes were developed in an electron cyclotron resonance system using a Cl2/Ar plasma without heating the sample. The InP etch rates increased as a function of Cl2 percentage in the Cl2/Ar mixture, rf power, or microwave power. Via holes, with depths of 100 μm, suitable for monolithic microwave-integrated circuits applications, have been achieved at etch rates as high as 4 μm/min. To the best of our knowledge, this is the highest etch rate ever reported in InP for via hole applications.

Original languageEnglish (US)
Pages (from-to)1903-1905
Number of pages3
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number4
StatePublished - Dec 1 2000

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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