We report the development of very high etch rates (>4 μm/min), for InP via hole processes. These processes were developed in an electron cyclotron resonance system using a Cl2/Ar plasma without heating the sample. The InP etch rates increased as a function of Cl2 percentage in the Cl2/Ar mixture, rf power, or microwave power. Via holes, with depths of 100 μm, suitable for monolithic microwave-integrated circuits applications, have been achieved at etch rates as high as 4 μm/min. To the best of our knowledge, this is the highest etch rate ever reported in InP for via hole applications.
|Original language||English (US)|
|Number of pages||3|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Dec 1 2000|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering