Electron cyclotron resonance etching of GaAs vias for monolithic microwave integrated circuits

Y. W. Chen, Boon Ooi*, G. I. Ng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We report a high etch rate GaAs via hole etching using Cl2/Ar plasma in an electron cyclotron resonance system. The effects of process parameters, such as RF power, gas flow rate, and microwave power on the GaAs etch rate were investigated. The influence of RF power, process pressure, and etch time on the resultant profiles were studied. The GaAs etch rate was found to increase significantly as Cl2 flow rate, and RF power or microwave power increased. A maximum etch rate of 6 μm/min has been obtained. Studies also showed that sidewall profile for via patterns can be controlled by varying process pressure and RF power.

Original languageEnglish (US)
Pages (from-to)223-227
Number of pages5
JournalOptical Materials
Volume14
Issue number3
DOIs
StatePublished - Jan 1 2000

Keywords

  • Dry etching
  • Electron cyclotron resonance
  • GaAs
  • MMIC
  • Via holes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Computer Science(all)
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering

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