Electron-beam study of nanometer performances of the SAL 601 chemically amplified resist

Massimo Gentili*, Annamaria Gerardino, Enzo Di Fabrizio

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The SAL 601 chemically amplified resist has been characterized for electron-beam (e-beam) exposure with feature size down to 75 nm. The main resist process parameters such as the pre and post exposure baking time and temperature, the resist thickness and its development conditions, have been investigated and calibrated for sub-100nm resolution. Various writing strategies making use of test patterns comprising different nominal feature-size were also investigated. Dense lines, as fine as 75 nm, are achieved in a 350nm thick resist with exposure latitude of 0.4 nm/μC/cm 2 at 5OkV accelerating voltage. The sub-100 nm resolution was achieved with a 3σ value of 12 nm.

Original languageEnglish (US)
Pages (from-to)4632-4635
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume37
Issue number8
StatePublished - Aug 1 1998

Keywords

  • Chemically amplified resists
  • Electron beam lithography
  • Nanostructures

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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