Electroluminescence from n-In2O3:Sn randomly assembled nanorods/p-SiC heterojunction

H. Y. Yang, S. F. Yu, H. K. Liang, T. P. Chen, J. Gao, Tao Wu

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Room-temperature electroluminescence (EL) has been realized from Sn-doped In2O3 (In2(VSn) nanorods. Heterojunction light-emitting diode (LED) was formed by depositing a layer of randomly packed nIn203:Sn nanorods onto α p-type 4H-SiC substrate. It is found that the emission intensity of the heteroj unction LED under forward bias can be maximized by doping the In2O3 nanorods with 3 mol. % of Sn. Furthermore, two emission peaks of the EL spectra are observed at ∼395 and ∼440 nm. These ultraviolet and visible peaks are attributed to the radiative recombination at Sn induced and intrinsic defect states of the In 2O3:Sn nanorods.

Original languageEnglish (US)
Pages (from-to)15585-15590
Number of pages6
JournalOptics Express
Volume18
Issue number15
DOIs
StatePublished - Jul 19 2010

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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