Electrochemical doping in electrolyte-gated polymer transistors

Jonathan D. Yuen, Anoop S. Dhoot, Ebinazar B. Namdas, Nelson E. Coates, Martin Heeney, Iain McCulloch, Daniel Moses, Alan J. Heeger*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

131 Scopus citations

Abstract

By comparing the changes in π-π* absorption with the transconductance in PEO-LiCIO4 electrolyte-gated FETs, we have demonstrated that the high channel currents obtained at low gate voltages result from reversible electrochemical doping of the semiconducting polymer film. At low temperatures, the conductivity of the electrochemically doped poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene), PBTTT-C14, is nonlinear with a crossover from dσ(T)/dT > 0 to dσ(T)/dT ≈ 0 as a function of the source-drain voltage. High current densities, up to 10 6 A/cm2 at 4.2 K, can be sustained in the electrochemically doped PBTTT-C14 films.

Original languageEnglish (US)
Pages (from-to)14367-14371
Number of pages5
JournalJournal of the American Chemical Society
Volume129
Issue number46
DOIs
StatePublished - Nov 21 2007
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)

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