Electro-opto characteristics of 850 nm oxide-confined vertical-cavity surface-emitting lasers

Mohd Sharizal Alias*, Paul O. Leisher, Kent D. Choquette, Khairul Anuar, Dominic Siriani, Sufian Mitani, Y. Mohd Razman, A. M. Abdul Fatah

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

In this paper, an MOCVD grown of VCSEL with an operating wavelength of 850 nm is fabricated and characterized. The sample includes numerous oxide aperture sizes, allowing a thorough investigation of the electrical and optical characteristics and overall device performance. Low threshold current operation <1mA was achieved for oxide apertures smaller than 10 μm. Analysis of the VCSEL performance as a function of the oxidize aperture sizes is also reported.

Original languageEnglish (US)
Title of host publicationICSE 2006
Subtitle of host publication2006 IEEE International Conference on Semiconductor Electronics, Proceedings
Pages227-230
Number of pages4
DOIs
StatePublished - 2006
Externally publishedYes
Event2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur, Malaysia
Duration: Nov 29 2006Dec 1 2006

Other

Other2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
CountryMalaysia
CityKuala Lumpur
Period11/29/0612/1/06

ASJC Scopus subject areas

  • Engineering(all)

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