Electro-optical properties of polymeric semiconductor devices constructed from poly (3-hexyl thienylene)

K. E. Ziemelis, A. T. Hussain, D. D.C. Bradley, R. H. Friend, J. Rühe, G. Wegner

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

MIS structures fabricated with a conjugated polymer as the active semiconductor are well suited for the investigation of charge storage in self-localised excitations. In such a structure, the gate electrode is used to control the surface or space charge densities; the formation of accumulation and inversion layers being of particular interest as charge is introduced into the polymer without associated dopant ions. We report measurements of the electrical and optical properties of devices fabricated with poly (3-hexyl thienylene). © 1991.
Original languageEnglish (US)
JournalSynthetic Metals
Volume41
Issue number3
DOIs
StatePublished - May 6 1991
Externally publishedYes

Fingerprint Dive into the research topics of 'Electro-optical properties of polymeric semiconductor devices constructed from poly (3-hexyl thienylene)'. Together they form a unique fingerprint.

Cite this