Electrically tunable transport and high-frequency dynamics in antiferromagnetic Sr3Ir2O7

Heidi Seinige, Morgan Williamson, Shida Shen, Cheng Wang, Gang Cao, Jianshi Zhou, John B. Goodenough, Maxim Tsoi

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We report dc and high-frequency transport properties of antiferromagnetic Sr3Ir2O7. Temperature-dependent resistivity measurements show that the activation energy of this material can be tuned by an applied dc electrical bias. The latter allows for continuous variations in the sample resistivity of as much as 50% followed by a reversible resistive switching at higher biases. Such a switching is of high interest for antiferromagnetic applications in high-speed memory devices. Interestingly, we found the switching behavior to be strongly affected by a high-frequency (microwave) current applied to the sample. The microwaves at 3-7 GHz suppress the dc switching and produce resonancelike features that we tentatively associated with the dissipationless magnonics recently predicted to occur in antiferromagnetic insulators subject to ac electric fields. We have characterized the effects of microwave irradiation on electronic transport in Sr3Ir2O7 as a function of microwave frequency and power, strength and direction of external magnetic field, strength and polarity of applied dc bias, and temperature. Our observations support the potential of antiferromagnetic materials for high-speed/high-frequency spintronic applications.
Original languageEnglish (US)
JournalPhysical Review B
Volume94
Issue number21
DOIs
StatePublished - Dec 29 2016
Externally publishedYes

Fingerprint Dive into the research topics of 'Electrically tunable transport and high-frequency dynamics in antiferromagnetic Sr3Ir2O7'. Together they form a unique fingerprint.

Cite this